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中文资料-SSTA中文资料

发布时间:2017-09-15 所属栏目:dd52

一 : SSTA中文资料

元器件交易网www.cecb2b.com

SSTA - SSTM

PRV : 50 - 1000 VoltsIo : 2.5 Amperes

FEATURES :

* High current capability

* High surge current capability * High reliability

* Low reverse current

* Low forward voltage drop * Super fast recovery time * Pb / RoHS Free

SURFACE MOUNT SUPER FAST RECTIFIERS

MECHANICAL DATA :

* Case : SMB Molded plastic

* Epoxy : UL94V-O rate flame retardant * Lead : Lead Formed for Surface Mount * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.1079 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating at 25 °C ambient temperature unless otherwise specified.Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.

RATING

Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage

Maximum Average Forward Current Ta = 55 °C Maximum Peak Forward Surge Current 8.3 ms. Single half sine wave Superimposed on rated load (JEDEC Method)

Maximum Peak Forward Voltage at IF = 2.5 A. Maximum DC Reverse Current Ta = 25 °C at Rated DC Blocking Voltage Ta = 100 °C Maximum Reverse Recovery Time ( Note 1 ) Typical Junction Capacitance ( Note 2 ) Junction Temperature Range Storage Temperature Range

SYMBOLSSTASSTBSSTCSSTDSSTESSTGSSTJSSTKSSTMUNIT

VRRMVRMSVDCIF(AV)IFSMVFIRIR(H)

Trr

503550

10070100

150105150

200140200

3002103002.5100

400280400

600420600

800560800

10007001000

VVVAA

0.95

5.0503550

1.72.5VμAμAnspf°C°C

CJTJTSTG

- 65 to + 150 - 65 to + 150

Notes :

( 1 ) Reverse Recovery Test Conditions : IF

SSTA SSTA中文资料

= 0.5 A, I

SSTA SSTA中文资料

R

SSTA SSTA中文资料

= 1.0 A, Irr = 0.25 A. ( 2 ) Measured at 1.0 MHz and applied reverse voltage of 4.0 VDC

Page 1 of 2Rev. 04 : March 25, 2005

SSTA SSTA中文资料

SSTA SSTA中文资料

元器件交易网www.cecb2b.com

SSTA SSTA中文资料

SSTA SSTA中文资料

Page 2 of 2Rev. 04 : March 25, 2005

二 : HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

?

HFA3046, HFA3096, HFA3127, HFA3128

Data Sheet

December 21, 2005

FN3076.13

Ultra High Frequency Transistor Arrays

The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1 process. Each array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications.

The HFA3046 and HFA3127 are all NPN arrays while the HFA3128 has all PNP transistors. The HFA3096 is an NPN-PNP combination. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.

Intersil provides an Application Note illustrating the use of these devices as RF amplifiers. For more information, visit our website at www.intersil.com.

Features

?NPN Transistor (fT) . . . . . . . . . . . . . . . . . . . . . . . . . 8GHz?NPN Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . .130?NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . 50V?PNP Transistor (fT). . . . . . . . . . . . . . . . . . . . . . . . .5.5GHz?PNP Current Gain (hFE). . . . . . . . . . . . . . . . . . . . . . . . .60?PNP Early Voltage (VA) . . . . . . . . . . . . . . . . . . . . . . . .20V?Noise Figure (50?) at 1.0GHz. . . . . . . . . . . . . . . . . 3.5dB?Collector to Collector Leakage. . . . . . . . . . . . . . . . . .<1pA ?Complete Isolation Between Transistors

?Pin Compatible with Industry Standard 3XXX Series

Arrays?Pb-Free Plus Anneal Available (RoHS Compliant)

Applications

?VHF/UHF Amplifiers?VHF/UHFMixers?IF Converters

?Synchronous Detectors

Ordering Information

PART NUMBER*HFA3046BHFA3046BZ (Note)HFA3096BHFA3096BZ (Note)HFA3127BHFA3127BZ (Note)HFA3127RHFA3127RZ (Note)HFA3128BHFA3128BZ (Note)HFA3128RHFA3128RZ (Note)

PART MARKINGHFA3046BHFA3046BZHFA3096BHFA3096BZHFA3127BHFA3127BZ127127ZHFA3128BHFA3128BZ128128Z

TEMP. RANGE (°C)

-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125-55 to 125

PACKAGE

14 Ld SOIC

14 Ld SOIC (Pb-free)16 Ld SOIC

16 Ld SOIC (Pb-free)16 Ld SOIC

16 Ld SOIC (Pb-free)16 Ld 3x3 QFN

16 Ld 3x3 QFN (Pb-free)16 Ld SOIC

16 Ld SOIC (Pb-free)16 Ld 3x3 QFN

16 Ld 3x3 QFN (Pb-free)

PKG. DWG. #M14.15M14.15M16.15M16.15M16.15M16.15L16.3x3L16.3x3M16.15M16.15L16.3x3L16.3x3

*Add “96” suffix for tape and reel.

NOTE:Intersil Pb-free plus anneal products employ special Pb-free material sets; molding compounds/die attach materials and 100% matte tin plate termination finish, which are RoHS compliant and compatible with both SnPb and Pb-free soldering operations. Intersil Pb-free products are MSL classified at Pb-free peak reflow temperatures that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020.

1

CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.1-888-INTERSIL or 1-888-468-3774|Intersil (and design) is a registered trademark of Intersil Americas Inc.

Copyright Intersil Americas Inc. 1998, 2005. All Rights Reserved

All other trademarks mentioned are the property of their respective owners.

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Pinouts

HFA3046TOP VIEW

1234567

Q3Q2Q1

Q5

11

Q4

98

12345678Q3Q2

Q4

Q1

QHFA3096TOP VIEW

16NC1514131211109

1234NC5

678

HFA3127TOP VIEW

Q1

161514131211

Q3

Q4

109

1234NC5

678

HFA3128TOP VIEW

Q1

161514131211

Q3

Q4

109

Q2Q5Q2Q5

HFA3127, HFA3128

TOP VIEW

Q2C

Q1C

Q1B13

12Q5B11Q5E10Q5C9

5Q3E

6Q3B

7Q4B

8Q4E

Q4C

Q1E14

16

Q2E1Q2B2NC3Q3C4

15

2

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Absolute Maximum Ratings

Collector to Emitter Voltage (Open Base) . . . . . . . . . . . . . . . . . . 8VCollector to Base Voltage (Open Emitter) . . . . . . . . . . . . . . . . . 12VEmitter to Base Voltage (Reverse Bias). . . . . . . . . . . . . . . . . . . 5.5VCollector Current(100% Duty Cycle) . . . . . . 18.5mA at TJ = 150°C

34mA at TJ = 125°C37mA at TJ = 110°C

Peak Collector Current (Any Condition). . . . . . . . . . . . . . . . . . 65mA

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Thermal Information

Thermal Resistance (Typical)

θJA (°C/W)

θJC (°C/W)

14 Ld SOIC Package (Note 1). . . . . . .120N/A16 Ld SOIC Package (Note 1). . . . . . .115N/AQFN Package (Notes 2, 3). . . . . . . . . .5710

Maximum Power Dissipation (Any One Transistor). . . . . . . . 0.15WMaximum Junction Temperature (Die). . . . . . . . . . . . . . . . . . . 175°CMaximum Junction Temperature (Plastic Package) . . . . . . . 150°CMaximum Storage Temperature Range. . . . . . . . . . -65°C to 150°CMaximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . 300°C(SOIC - Lead Tips Only)

Operating Information

Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . -55°C to 125°C

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of thedevice at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:

1.θJA is measured with the component mounted on an evaluation PC board in free air.

2.For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.

3.θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.

Electrical Specifications

PARAMETER

DC NPN CHARACTERISTICSCollector to Base Breakdown Voltage, V(BR)CBO

Collector to Emitter Breakdown Voltage, V(BR)CEO

Collector to Emitter Breakdown Voltage, V(BR)CES

Emitter to Base Breakdown Voltage, V(BR)EBO

Collector-Cutoff-Current, ICEOCollector-Cutoff-Current, ICBOCollector to Emitter Saturation Voltage, VCE(SAT)

Base to Emitter Voltage, VBEDC Forward-Current Transfer Ratio, hFEEarly Voltage, VA

Base to Emitter Voltage DriftCollector to Collector Leakage

TA = 25°C

DIE

TEST CONDITIONS

MIN

TYP

MAX

MIN

SOIC, QFN

TYP

MAX

UNITS

IC = 100μA, IE = 0IC = 100μA, IB = 0

IC = 100μA, Base Shorted to EmitterIE = 10μA, IC = 0VCE = 6V, IB = 0VCB = 8V, IE = 0IC = 10mA, IB = 1mAIC = 10mA

IC = 10mA, VCE = 2VIC = 1mA, VCE = 3.5VIC = 10mA

128105.5----4020--

181220620.10.30.8513050-1.51

----100100.50.95----

128105.5----4020--

181220620.10.30.8513050-1.51

----100100.50.95----

VVVVnAnAVV

VmV/°CpA

Electrical Specifications

PARAMETER

TA = 25°C

DIE

TEST CONDITIONS

MIN

TYP

MAX

MIN

SOIC, QFN

TYP

MAX

UNITS

DYNAMIC NPN CHARACTERISTICSNoise Figure

fT Current Gain-Bandwidth Product

f = 1.0GHz, VCE = 5V,IC = 5mA, ZS = 50?IC = 1mA, VCE = 5VIC = 10mA, VCE = 5V

---3.55.58

------3.55.58

---dBGHzGHz

3

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Electrical Specifications

PARAMETER

Power Gain-Bandwidth Product, fMAX

Base to Emitter CapacitanceCollector to Base Capacitance

TA = 25°C (Continued)

DIE

TEST CONDITIONS

IC = 10mA, VCE = 5VVBE = -3VVCB = 3VTA = 25°C

DIE

PARAMETER

DC PNP CHARACTERISTICSCollector to Base Breakdown Voltage, V(BR)CBO

Collector to Emitter Breakdown Voltage, V(BR)CEO

Collector to Emitter Breakdown Voltage, V(BR)CES

Emitter to Base Breakdown Voltage, V(BR)EBO

Collector Cutoff Current, ICEOCollector Cutoff Current, ICBOCollector to Emitter Saturation Voltage, VCE(SAT)

Base to Emitter Voltage, VBEDC Forward-Current Transfer Ratio, hFEEarly Voltage, VA

Base to Emitter Voltage DriftCollector to Collector Leakage

IC = -100μA, IE = 0IC = -100μA, IB = 0

IC = -100μA, Base Shorted to EmitterIE = -10μA, IC = 0VCE = -6V, IB = 0VCB = -8V, IE = 0IC = -10mA, IB = -1mAIC = -10mA

IC = -10mA, VCE = -2VIC = -1mA, VCE = -3.5VIC = -10mA

108104.5----2010--TA = 25°C

DIE

PARAMETER

DYNAMIC PNP CHARACTERISTICSNoise Figure

fT Current Gain-Bandwidth Product

Power Gain-BandwidthProduct

Base to Emitter CapacitanceCollector to Base Capacitance

f = 1.0GHz, VCE = -5V,IC = -5mA, ZS = 50?IC = -1mA, VCE = -5VIC = -10mA, VCE = -5VIC = -10mA, VCE = -5VVBE = 3VVCB = -3V

------3.525.53200300

------------3.525.52500600

------dBGHzGHzGHzfFfF

TEST CONDITIONS

MIN

TYP

MAX

MIN

SOIC, QFN

TYP

MAX

UNITS

151515520.10.30.856020-1.51

----100100.50.95----108104.5----2010--151515520.10.30.856020-1.51

----100100.50.95----VmV/°CpAVVVVnAnAVV

TEST CONDITIONS

MIN

TYP

MAX

MIN

SOIC, QFN

TYP

MAX

UNITS

MIN---TYP6200200

MAX---MIN---SOIC, QFN

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TYP2.5500500

MAX---UNITSGHzfFfF

Electrical Specifications

Electrical Specifications

4

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Electrical Specifications

TA = 25°C (Continued)

DIE

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

MIN

SOIC, QFN

TYP

MAX

UNITS

DIFFERENTIAL PAIR MATCHING CHARACTERISTICS FOR THE HFA3046Input Offset VoltageInput Offset CurrentInput Offset Voltage TC

IC = 10mA, VCE = 5VIC = 10mA, VCE = 5VIC = 10mA, VCE = 5V

---1.550.5

5.025----1.550.5

5.025-mVμAμV/°C

S-Parameter and PSPICE model data is available from Intersil Sales Offices, and Intersil Corporation’s web site.

Common Emitter S-Parameters of NPN 3μm x 50μm Transistor

FREQ. (Hz)

|S11|

PHASE(S11)

|S21|

PHASE(S21)

|S12|

PHASE(S12)

|S22|

PHASE(S22)

VCE = 5V and IC = 5mA1.0E+082.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09

0.830.790.730.670.610.550.500.460.420.390.360.340.320.300.280.270.250.240.230.220.210.200.200.190.180.180.170.170.160.16

-11.78-22.82-32.64-41.08-48.23-54.27-59.41 -63.81-67.63-70.98-73.95-76.62-79.04-81.25-83.28-85.17-86.92-88.57-90.12-91.59-92.98-94.30-95.57-96.78-97.93-99.05-100.12-101.15-102.15-103.11

11.0710.519.758.918.107.356.696.115.615.174.794.454.153.893.663.453.273.102.942.802.682.562.452.352.262.182.102.021.961.89

168.57157.89148.44140.36133.56127.88123.10119.04115.57112.55109.91107.57105.47103.57101.84100.2698.7997.4396.1594.9593.8192.7391.7090.7289.7888.8788.0087.1586.3385.54

1.41E-022.69E-023.75E-024.57E-025.19E-025.65E-026.00E-026.27E-026.47E-026.63E-026.75E-026.85E-026.93E-027.00E-027.05E-027.10E-027.13E-027.17E-027.19E-027.21E-027.23E-027.25E-027.27E-027.28E-027.29E-027.30E-027.31E-027.31E-027.32E-027.32E-02

78.8868.6359.5851.9045.5040.2135.8232.1529.0726.4524.19 22.2420.5319.0217.6916.4915.4114.4313.5412.7311.9811.2910.6410.059.498.968.478.017.577.16

0.970.930.860.790.730.670.620.570.530.500.470.450.430.410.400.390.380.370.360.350.350.340.340.330.330.330.330.330.330.33

-11.05-21.35-30.44-38.16-44.59-49.93-54.37-58.10-61.25-63.96-66.31-68.37-70.19-71.83-73.31-74.66-75.90-77.05-78.12-79.13-80.09-80.99-81.85-82.68-83.47-84.23-84.97-85.68-86.37-87.05

5

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of NPN 3μm x 50μm Transistor

FREQ. (Hz)

|S11|

PHASE(S11)

|S21|

PHASE(S21)

|S12|

VCE = 5V and IC = 10mA 1.0E+08 2.0E+08 3.0E+08 4.0E+08 5.0E+08 6.0E+08 7.0E+08 8.0E+08 9.0E+08 1.0E+09 1.1E+09 1.2E+09 1.3E+09 1.4E+09 1.5E+09 1.6E+09 1.7E+09 1.8E+09 1.9E+09 2.0E+09 2.1E+09 2.2E+09 2.3E+09 2.4E+09 2.5E+09 2.6E+09 2.7E+09 2.8E+09 2.9E+09 3.0E+09

0.720.670.600.530.470.420.370.340.310.290.270.250.240.220.210.200.200.190.180.180.170.170.160.160.160.150.150.150.150.14

-16.43-31.26-43.76-54.00-62.38-69.35-75.26-80.36-84.84-88.83-92.44-95.73-98.75-101.55-104.15-106.57-108.85-110.98-113.00-114.90-116.69-118.39-120.01-121.54-122.99-124.37-125.69-126.94-128.14-129.27

15.1213.9012.3910.929.628.537.626.866.225.695.234.834.494.193.933.703.493.303.132.982.842.722.602.492.392.302.222.142.061.99

165.22152.04141.18132.57125.78120.37116.00112.39109.36106.77104.51102.53100.7599.1697.7096.3695.1293.9692.8791.8590.8789.9489.0688.2187.3986.6085.8385.0984.3683.66

1.27E-022.34E-023.13E-023.68E-024.05E-024.31E-024.49E-024.63E-024.72E-024.80E-024.86E-024.90E-024.94E-024.97E-024.99E-025.01E-025.03E-025.05E-025.06E-025.07E-025.08E-025.09E-025.10E-025.11E-025.12E-025.12E-025.13E-025.13E-025.14E-025.15E-02

75.4162.8952.5844.5038.2333.3429.4726.3723.8421.7520.0018.5217.2516.1515.1914.3413.6012.9412.3411.8111.3310.8910.5010.139.809.499.218.958.718.49

0.950.880.790.700.630.570.510.470.440.410.390.370.350.340.330.320.310.310.300.300.300.290.290.290.290.290.290.290.290.29

-14.26-26.95-37.31-45.45-51.77-56.72-60.65-63.85-66.49-68.71-70.62-72.28-73.76-75.08-76.28-77.38-78.41-79.37-80.27-81.13-81.95-82.74-83.50-84.24-84.95-85.64-86.32-86.98-87.62-88.25

(Continued)

|S22|

PHASE(S22)

PHASE(S12)

Common Emitter S-Parameters of PNP 3μm x 50μm Transistor

FREQ. (Hz)

|S11|

PHASE(S11)

|S21|

PHASE(S21)

|S12|

PHASE(S12)

|S22|

PHASE(S22)

VCE = -5V and IC = -5mA1.0E+082.0E+083.0E+084.0E+085.0E+08

0.720.680.620.570.52

-16.65-32.12-45.73-57.39-67.32

10.119.448.577.686.86

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166.77154.69144.40135.95129.11

1.66E-023.10E-024.23E-025.05E-025.64E-02

77.1865.9456.3948.6642.52

0.960.900.820.740.67

-10.76-20.38-28.25-34.31-38.81

6

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of PNP 3μm x 50μm Transistor

FREQ. (Hz)6.0E+087.0E+088.0E+089.0E+081.0E+091.1E+091.2E+091.3E+091.4E+091.5E+091.6E+091.7E+091.8E+091.9E+092.0E+092.1E+092.2E+092.3E+092.4E+092.5E+092.6E+092.7E+092.8E+092.9E+093.0E+09

|S11|0.470.430.400.380.360.340.330.320.300.300.290.280.280.270.270.260.260.260.250.250.250.250.250.240.24

PHASE(S11)-75.83-83.18-89.60-95.26-100.29-104.80-108.86-112.53-115.86-118.90-121.69-124.24-126.59-128.76-130.77-132.63-134.35-135.96-137.46-138.86-140.17-141.39-142.54-143.62-144.64

|S21|6.145.535.014.564.183.863.583.333.122.922.752.602.472.342.232.132.041.951.871.801.731.671.611.561.51

PHASE(S21)123.55118.98115.17111.94109.17106.76104.63102.72101.0199.4498.0196.6895.4494.2993.1992.1691.1890.2489.3488.4887.6586.8586.0785.3184.58

|S12|6.07E-026.37E-026.60E-026.77E-026.91E-027.01E-027.09E-027.16E-027.22E-027.27E-027.32E-027.35E-027.39E-027.42E-027.45E-027.47E-027.50E-027.52E-027.55E-027.57E-027.59E-027.61E-027.63E-027.65E-027.67E-02

(Continued)

|S22|0.610.550.510.470.440.410.390.370.360.340.330.320.310.300.300.290.280.280.280.270.270.260.260.260.26

PHASE(S22)-42.10-44.47-46.15-47.33-48.15-48.69-49.05-49.26-49.38-49.43-49.44-49.43-49.40-49.38-49.36-49.35-49.35-49.38-49.42-49.49-49.56-49.67-49.81-49.96-50.13

PHASE(S12)

37.6633.7930.6728.1426.0624.3322.8921.6720.6419.7619.0018.3517.7917.3016.8816.5216.2015.9215.6815.4815.3015.1515.0114.9014.81

VCE = -5V, IC = -10mA1.0E+082.0E+083.0E+084.0E+085.0E+086.0E+087.0E+088.0E+089.0E+081.0E+091.1E+091.2E+09

0.580.530.480.430.400.370.350.330.320.310.300.30

-23.24-44.07-61.50-75.73-87.36-96.94-104.92-111.64-117.36-122.27-126.51-130.21

13.0311.7510.258.887.726.786.015.394.874.444.073.76

163.45149.11137.78129.12122.49117.33113.22109.85107.05104.66102.59100.76

1.43E-022.58E-023.38E-023.90E-024.25E-024.48E-024.64E-024.76E-024.85E-024.92E-024.97E-025.02E-02

73.3860.4350.1642.4936.8132.5929.3926.9425.0423.5522.3721.44

0.930.850.740.650.580.510.470.430.400.370.350.33

-13.46-24.76-33.10-38.83-42.63-45.07-46.60-47.49-47.97-48.18-48.20-48.11

7

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Common Emitter S-Parameters of PNP 3μm x 50μm Transistor

FREQ. (Hz)1.3E+091.4E+091.5E+091.6E+091.7E+091.8E+091.9E+092.0E+092.1E+092.2E+092.3E+092.4E+092.5E+092.6E+092.7E+092.8E+092.9E+093.0E+09

|S11|0.290.290.280.280.280.280.270.270.270.270.270.270.270.260.260.260.260.26

PHASE(S11)-133.46-136.33-138.89-141.17-143.21-145.06-146.73-148.26-149.65-150.92-152.10-153.18-154.17-155.10-155.96-156.76-157.51-158.21

|S21|3.493.253.052.872.702.562.432.312.202.102.011.931.861.791.721.661.601.55

PHASE(S21)

99.1497.6796.3395.1093.9692.9091.9090.9590.0589.2088.3787.5986.8286.0985.3884.6884.0183.35

|S12|5.06E-025.09E-025.12E-025.15E-025.18E-025.21E-025.23E-025.26E-025.28E-025.30E-025.33E-025.35E-025.38E-025.40E-025.42E-025.45E-025.47E-025.50E-02

(Continued)

|S22|0.320.310.300.290.280.270.270.260.260.250.250.250.240.240.240.240.240.23

PHASE(S22)-47.95-47.77-47.58-47.39-47.23-47.09-46.98-46.91-46.87-46.87-46.90-46.97-47.07-47.18-47.34-47.55-47.76-48.00

PHASE(S12)

20.7020.1119.6519.2919.0118.8018.6518.5518.4918.4618.4718.5018.5518.6218.7118.8018.9119.03

Typical Performance Curves

25COLLECTOR CURRENT (mA)

IB = 200μAIB = 160μAIB =120μA

100m10m

20

COLLECTOR CURRENTAND BASE CURRENT (A)

1m100μ10μ1μ100n10n1n0.5

0.60.70.80.9BASE TO EMITTER VOLTAGE (V)

1.0

VCE = 3V

IC

IB

15

10

IB = 80μAIB = 40μA

5

12345

COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1.NPN COLLECTOR CURRENT vs COLLECTOR TO

EMITTER VOLTAGEFIGURE 2.NPN COLLECTOR CURRENT AND BASE

CURRENT vs BASE TO EMITTER VOLTAGE

8

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Typical Performance Curves

VCE = 3V

GAIN BANDWIDTH PRODUCT (GHz)

(Continued)

10.0

8.0

160140DC CURRENT GAIN

1201008060402001μ

10μ

100μ

1m

10m

100m

VCE = 5V

6.0

VCE = 1V

VCE = 3V

4.0

2.0

00.1

1.010100

COLLECTOR CURRENT (A)COLLECTOR CURRENT (mA)

FIGURE 3.NPN DC CURRENT GAIN vs COLLECTOR CURRENT

FIGURE 4.NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR

扩展:3096天 / 3096天 囚室少女 / gb3096 2008

CURRENT (UHF 3 x 50 WITH BOND PADS)

-25COLLECTOR CURRENT (mA)

IB = -400μA

COLLECTOR CURRENTAND BASE CURRENT (A)

IB = -320μAIB = -240μA

-100m-10m-1m-100μ-10μ-1μ-100n-10n

VCE = -3V

ICIB

-20

-15

IB = -160μA

-10

IB = -80μA

-5

0-1-2-3-4-5

-1n-0.5

-0.6-0.7-0.8-0.9-1.0

COLLECTOR TO EMITTER VOLTAGE (V)BASE TO EMITTER VOLTAGE (V)

FIGURE 5.PNP COLLECTOR CURRENT vs COLLECTOR TO

EMITTER VOLTAGEFIGURE 6.PNP COLLECTOR CURRENT AND BASE

CURRENT vs BASE TO EMITTER VOLTAGE

5.0GAIN BANDWIDTH PRODUCT (GHz)

VCE = -3V

VCE = -5V

4.0

VCE = -3V

3.0

VCE = -1V

2.0

160140DC CURRENT GAIN

120100806040200-1μ

-10μ

-100μ

-1m

-10m

-100m

1.0-0.1

-1.0-10-100

COLLECTOR CURRENT (A)COLLECTOR CURRENT (mA)

FIGURE 7.PNP DC CURRENT GAIN vs COLLECTOR

CURRENTFIGURE 8.PNP GAIN BANDWIDTH PRODUCT vs COLLECTOR

CURRENT (UHF 3 x 50 WITH BOND PADS)

9

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Die Characteristics

DIE DIMENSIONS:

53 mils x 52 mils x 19 mils1340μm x 1320μm x 483μmMETALLIZATION:

Type: Metal 1:AlCu(2%)/TiWThickness: Metal 1:8k? ±0.4k?Type: Metal 2:AlCu(2%)

Thickness: Metal 2:16k? ±0.8k?

PASSIVATION:

Type: Nitride

Thickness: 4k? ±0.5k?PROCESS:UHF-1

SUBSTRATE POTENTIAL: (POWERED UP)Unbiased

Metallization Mask Layout

HFA3096, HFA3127, HFA3128

23

1340m(53 mils)

456

7

11615

14131211

8910

1320μm(52 mils)

HFA3046

23

1340m(53 mils)

456

7

11413

12

1110

8

9

1320μm(52 mils)

Pad numbers correspond to SOIC pinout.

10

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Small Outline Plastic Packages (SOIC)

M14.15 (JEDEC MS-012-AB ISSUE C)

14 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE

INCHES

SYMBOL

A

MILLIMETERSMIN1.350.100.330.198.553.805.800.250.40

140°

MAX1.750.250.510.258.754.006.200.501.278°

NOTES

--9-34--567-Rev. 0 12/93

MIN0.05320.00400.0130.00750.33670.14970.22840.00990.016

140°

MAX0.06880.00980.0200.00980.34440.15740.24400.01960.0508°

A1BCDEe

0.050 BSC1.27 BSC

HhLN

NOTES:

1.Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95.2.Dimensioning and tolerancing per ANSI Y14.5M-1982.

3.Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006inch) per side.4.Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.5.The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.6.“L” is the length of terminal for soldering to a substrate.7.“N” is the number of terminal positions.

8.Terminal numbers are shown for reference only.

9.The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of0.61mm (0.024 inch).10.Controlling dimension:MILLIMETER. Converted inch dimensions

are not necessarily exact.

HFA HFA3096BZ96中文资料

α

11

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Small Outline Plastic Packages (SOIC)

M16.15 (JEDEC MS-012-AC ISSUE C)

16 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE

INCHES

SYMBOL

A

MILLIMETERSMIN1.350.100.330.199.803.805.800.250.40

16

8°MAX1.750.250.510.2510.004.006.200.501.27

NOTES

--9-34--567-Rev. 1 6/05

MIN0.05320.00400.0130.00750.38590.14970.22840.00990.016

160°

MAX0.06880.00980.0200.00980.39370.15740.24400.01960.050

A1BCDEeH

0.050 BSC1.27 BSC

hLN

NOTES:

1.Symbols are defined in the “MO Series Symbol List” in Section 2.2 of Publication Number 95.2.Dimensioning and tolerancing per ANSI Y14.5M-1982.

3.Dimension “D” does not include mold flash, protrusions or gate burrs. Mold flash, protrusion and gate burrs shall not exceed 0.15mm (0.006inch) per side.4.Dimension “E” does not include interlead flash or protrusions. Interlead flash and protrusions shall not exceed 0.25mm (0.010 inch) per side.5.The chamfer on the body is optional. If it is not present, a visual index feature must be located within the crosshatched area.6.“L” is the length of terminal for soldering to a substrate.7.“N” is the number of terminal positions.

扩展:3096天 / 3096天 囚室少女 / gb3096 2008

8.Terminal numbers are shown for reference only.

9.The lead width “B”, as measured 0.36mm (0.014 inch) or greater above the seating plane, shall not exceed a maximum value of 0.61mm(0.024 inch).10.Controlling dimension:MILLIMETER. Converted inch dimensions are

not necessarily exact.

HFA HFA3096BZ96中文资料

α

12

FN3076.13

December 21, 2005

HFA HFA3096BZ96中文资料

元器件交易网www.cecb2b.com

HFA3046, HFA3096, HFA3127, HFA3128

Quad Flat No-Lead Plastic Package (QFN)Micro Lead Frame Plastic Package (MLFP)

Anvil singulation method is used and not present for sawsingulation.

L1e

L

L1

CC

e

L

10.Compliant to JEDEC MO-220VEED-2 Issue C, except for the E2

and D2 MAX dimension.

TERMINAL TIP

All Intersil U.S. products are manufactured, assembled and tested utilizing ISO9000 quality systems.

Intersil Corporation’s quality certifications can be viewed at www.intersil.com/design/quality

Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design, software and/or specifications at any time withoutnotice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate andreliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may resultfrom its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.

For information regarding Intersil Corporation and its products, see www.intersil.com

13

FN3076.13

December 21, 2005

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三 : NLAST4599中文资料

元器件交易网www.cecb2b.com

NLAST4599

Low Voltage Single SupplySPDT Analog Switch

The NLAST4599 is an advanced high speed CMOS single pole -double throw analog switch fabricated with silicon gate CMOStechnology. It achieves high speed propagation delays and low ONresistances while maintaining low power dissipation. This switchcontrols analog and digital voltages that may vary across the fullpower-supply range (from VCC to GND).

The device has been designed so the ON resistance (RON) is muchlower and more linear over input voltage than RON of typical CMOSanalog switches.

The channel select input structure provides protection when voltagesbetween 0 V and 5.5 V are applied, regardless of the supply voltage. Thisinput structure helps prevent device destruction caused by supply voltage -input/output voltage mismatch, battery backup, hot insertion, etc.

http://onsemi.com

4599 NLAST4599中文资料

??????????

Select Pin Compatible with TTL Levels

Channel Select Input Over-Voltage Tolerant to 5.5 VFast Switching and Propagation SpeedsBreak-Before-Make Circuitry

Low Power Dissipation: ICC = 2 mA (Max) at TA = 25°CDiode Protection Provided on Channel Select Input

Improved Linearity and Lower ON Resistance over Input VoltageLatch-up Performance Exceeds 300 mA

ESD Performance: HBM > 2000 V; MM > 200 VChip Complexity: 38 FETs

ORDERING INFORMATION

See detailed ordering and shipping information in the packagedimensions section of this data sheet.

SELECT

4599 NLAST4599中文资料

V+GNDNOCOMNC

FUNCTION TABLE

Figure 1. Pin Assignment

SelectLH

ON Channel

4599 NLAST4599中文资料

NCNO

COM

Figure 2. Logic Symbol

4599 NLAST4599中文资料

? Semiconductor Components Industries, LLC, 2002

November, 2002 - Rev. 6

CHANNEL SELECTNONC

1

Publication Order Number:

NLAST4599/D

4599 NLAST4599中文资料

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NLAST4599

ABSOLUTE MAXIMUM RATINGS (Note 1)

4599 NLAST4599中文资料

4599 NLAST4599中文资料

4599 NLAST4599中文资料

Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond thoseindicated may adversely affect device reliability. Functional operation under absolute maximum-rated conditions is not implied. Functionaloperation should be restricted to the Recommended Operating Conditions.

1.Maximum Ratings are those values beyond which damage to the device may occur. Functional operation should be restricted to theRecommended Operating Conditions.2.Tested to EIA/JESD22-A114-A3.Tested to EIA/JESD22-A115-A4.Tested to JESD22-C101-A5.Tested to EIA/JESD78

RECOMMENDED OPERATING CONDITIONS

4599 NLAST4599中文资料

NORMALIZED FAILURE RATE

DEVICE JUNCTION TEMPERATURE VERSUS TIMETO 0.1% BOND FAILURES

100

TIME, YEARS

11

10

1000

Figure 3. Failure Rate vs. Time Junction Temperature

http://onsemi.com

2

4599 NLAST4599中文资料

元器件交易网www.cecb2b.com

NLAST4599

DC CHARACTERISTICS - Digital Section (Voltages Referenced to GND)

4599 NLAST4599中文资料

DC ELECTRICAL CHARACTERISTICS - Analog Section

4599 NLAST4599中文资料

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3

4599 NLAST4599中文资料

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NLAST4599

AC ELECTRICAL CHARACTERISTICS (Input t

4599 NLAST4599中文资料

= t = 3.0 ns)

4599 NLAST4599中文资料

*Typical Characteristics are at 25_C.

ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)

4599 NLAST4599中文资料

http://onsemi.com

4

4599 NLAST4599中文资料

元器件交易网www.cecb2b.com

NLAST4599

VCC

4599 NLAST4599中文资料

扩展:l298n中文资料 / irf540n中文资料 / irf640n中文资料

0.1 mF

Figure 4. tBBM (Time Break-Before-Make)

4599 NLAST4599中文资料

4599 NLAST4599中文资料

VCC

VCC0.1 mVOUT

Output

VOL

ON

OFF

4599 NLAST4599中文资料

Input

0 V

Figure 5. tON/tOFF

OFF

ON

Input

Figure 6. tON/tOFF

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5

4599 NLAST4599中文资料

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NLAST4599

50 ?

4599 NLAST4599中文资料

?Transmitted

Channel switch control/s test socket is normalized. Off isolation is measured across an off channel. On loss isthe bandwidth of an On switch. VISO, Bandwidth and VONL are independent of the input signal direction.

VOUTVISOIN at 100 kHzIN

VOUTVONLIN at 100 kHz to 50 MHzVIN

4599 NLAST4599中文资料

4599 NLAST4599中文资料

ǒBandwidth (BW) = the frequency 3 dB below VONL

4599 NLAST4599中文资料

Figure 7. Off Channel Isolation/On Channel Loss (BW)/Crosstalk

(On Channel to Off Channel)/VONL

CL

OutputVINVCCGND

Figure 8. Charge Injection: (Q)

100

10

LEAKAGE

4599 NLAST4599中文资料

(nA)10.10.01

0.001

-55-20257085125

TEMPERATURE (°C)

Figure 9. Switch Leakage vs. Temperature

http://onsemi.com

6

4599 NLAST4599中文资料

元器件交易网www.cecb2b.com

NLAST4599

(dB)

TIME (ns)

1

THD + NOISE (%)

0.1

0.01

110

FREQUENCY (kHz)

100

012

VCOM (V)

345

Figure 14. Total Harmonic Distortion

Plus Noise vs. Frequency

Figure 15. Charge Injection vs. COM Voltage

http://onsemi.com

7

4599 NLAST4599中文资料

4599 NLAST4599中文资料

元器件交易网www.cecb2b.com

NLAST4599

100101

ICC (nA)

0.10.010.0010.00010.00001

-40

-20

20

60

80

100

120

VIS (VDC)

Temperature (°C)

Figure 16. ICC vs. Temp, VCC = 3 V & 5 V

Figure 17. RON vs. VCC, Temp = 255C

100908070RON (?)

6050403020100RON (?)

0.0

0.5

0.01.01.52.02.53.03.50.51.01.52.02.53.03.54.04.5

VIS (VDC)

VIS (VDC)

Figure 20. RON vs. Temp, VCC = 3.0 V

Figure 21. RON vs. Temp, VCC = 4.5 V

http://onsemi.com

8

4599 NLAST4599中文资料

4599 NLAST4599中文资料

4599 NLAST4599中文资料

元器件交易网www.cecb2b.com

NLAST4599

25

20RON (?)

10

5

1500.0

0.51.01.52.02.53.03.54.04.55.0

4599 NLAST4599中文资料

0.00.51.01.52.02.53.03.54.04.55.05.5

VIS (VDC)

VIS (VDC)

Figure 22. RON vs. Temp, VCC = 5.0 VFigure 23. RON vs. Temp, VCC = 5.5 V

DEVICE ORDERING INFORMATION

4599 NLAST4599中文资料

4599 NLAST4599中文资料

4599 NLAST4599中文资料

DIRECTION OF FEED

Figure 24. Tape Ends for Finished Goods

Figure 25. SC70-6/SC-88/SOT-363 DFT2 and SOT23-6/TSOP-6/SC59-6 DTT1 Reel Configuration/Orientation

http://onsemi.com

9

4599 NLAST4599中文资料

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NLAST4599

4599 NLAST4599中文资料

Figure 26. Reel Dimensions

4599 NLAST4599中文资料

REEL DIMENSIONS

Tape Size8 mm

T and R Suffix

T1, T2

A Max178 mm(7 in)

G

8.4 mm, + 1.5 mm, -0.0(0.33 in + 0.059 in, -0.00)

t Max14.4 mm(0.56 in)

HOLE

Figure 27. Reel Winding Direction

http://onsemi.com

10

4599 NLAST4599中文资料

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NLAST4599

PACKAGE DIMENSIONS

SC70-6/SC-88/SOT-363DF SUFFIXCASE 419B-02

扩展:l298n中文资料 / irf540n中文资料 / irf640n中文资料

4599 NLAST4599中文资料

NOTES:1.DIMENSIONING AND TOLERANCING PER ANSIY14.5M, 1982.2.CONTROLLING DIMENSION: INCH.3.419B?01 OBSOLETE, NEW STANDARD 419B?02.

4599 NLAST4599中文资料

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11

4599 NLAST4599中文资料

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NLAST4599

4599 NLAST4599中文资料

4599 NLAST4599中文资料

4599 NLAST4599中文资料

PACKAGE DIMENSIONS

SOT23-6/TSOP-6/SC59-6

DT SUFFIXCASE 318G-02

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to makechanges without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for anyparticular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and allliability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/orspecifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must bevalidated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicationsintended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or deathmay occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLCand its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney feesarising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges thatSCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.

PUBLICATION ORDERING INFORMATION

JAPAN: ON Semiconductor, Japan Customer Focus Center2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051Phone: 81-3-5773-3850Email: r14525@onsemi.com

扩展:l298n中文资料 / irf540n中文资料 / irf640n中文资料

四 : DD52RC中文资料

元器件交易网www.cecb2b.com

dd52 DD52RC中文资料

元器件交易网www.cecb2b.com

扩展:stc89c52rc中文资料 / stc90c52rc中文资料 / stc89le52rc中文资料

本文标题:中文资料-SSTA中文资料
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